Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 16
Page 61
MOCVD OF Cu ON TEFLON - AF AND ALUMINA - MODIFIED TEFLON - AF D .
Martini , R . Sutcliffet , and J . Kelber Department of Chemistry , University of
North Texas ABSTRACT XPS studies of Cu ( I ) hfac ( COD ) adsorbed on clean
and ...
MOCVD OF Cu ON TEFLON - AF AND ALUMINA - MODIFIED TEFLON - AF D .
Martini , R . Sutcliffet , and J . Kelber Department of Chemistry , University of
North Texas ABSTRACT XPS studies of Cu ( I ) hfac ( COD ) adsorbed on clean
and ...
Page 64
2 Cu ( 2p ) and Cu ( L , VV ) spectra after Cu ( I ) hfac ( COD ) adsorption on clean
Teflon - AF at 110 K , followed by annealing to 300 K ( bottom ) and 600 K ( top )
in UHV . Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
2 Cu ( 2p ) and Cu ( L , VV ) spectra after Cu ( I ) hfac ( COD ) adsorption on clean
Teflon - AF at 110 K , followed by annealing to 300 K ( bottom ) and 600 K ( top )
in UHV . Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
Page 66
SUMMARY AND CONCLUSIONS XPS studies have been carried out on the
chemical vapor deposition of Cu ( I ) hfac ( COD ) on Teflon - AF and alumina -
modified Teflon - AF under UHV conditions . The results show that for both
substrates ...
SUMMARY AND CONCLUSIONS XPS studies have been carried out on the
chemical vapor deposition of Cu ( I ) hfac ( COD ) on Teflon - AF and alumina -
modified Teflon - AF under UHV conditions . The results show that for both
substrates ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer