Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 61
MOCVD OF Cu ON TEFLON - AF AND ALUMINA - MODIFIED TEFLON - AF D. Martini , R. Sutcliffe , and J. Kelber Department ... Teflon-AF Martini, R Sutcliffe, and J Kelber.
MOCVD OF Cu ON TEFLON - AF AND ALUMINA - MODIFIED TEFLON - AF D. Martini , R. Sutcliffe , and J. Kelber Department ... Teflon-AF Martini, R Sutcliffe, and J Kelber.
Page 62
... Teflon - AF ( see ref . 8 ) . For Teflon - AF 1601 : m / n = 1/2 . The co - polymer used in these studies , Teflon - AF 1601 , is 33 mole % PTFE and 66 mole % of the dioxole species . The chemistry of Cu ( I ) and Cu ( II ) precursors ...
... Teflon - AF ( see ref . 8 ) . For Teflon - AF 1601 : m / n = 1/2 . The co - polymer used in these studies , Teflon - AF 1601 , is 33 mole % PTFE and 66 mole % of the dioxole species . The chemistry of Cu ( I ) and Cu ( II ) precursors ...
Page 64
... Teflon - AF at 110 K. followed by annealing to 300 K ( bottom ) and 600 K ( top ) in UHV . Cu ( I ) hfac ( COD ) on Aluminized Teflon - AF 1. TMA on Teflon - AF Binding Energy ( eV ) Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ...
... Teflon - AF at 110 K. followed by annealing to 300 K ( bottom ) and 600 K ( top ) in UHV . Cu ( I ) hfac ( COD ) on Aluminized Teflon - AF 1. TMA on Teflon - AF Binding Energy ( eV ) Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch