Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 34
... absorbance spectra after normalizing them with respect to film thickness . Figure 7 shows normalized FTIR spectra of a -40V bias 1.5 F : H film before and after 60 minutes at 400 ° C . The spectra do not change much after 15 minutes ...
... absorbance spectra after normalizing them with respect to film thickness . Figure 7 shows normalized FTIR spectra of a -40V bias 1.5 F : H film before and after 60 minutes at 400 ° C . The spectra do not change much after 15 minutes ...
Page 42
... Absorbance -30 0.2 + 0 5 .05- Cure No. 3 - Time .04 A Film Stress , MPa Cure No. 3 - Time 2 weeks .03 .02- Cure No. 15 - Time 0 .01 . Cure No. 15 - Time 2 weeks -35 0.0 + -40 0 20 40 Norm . SiH Bond Density , % 60 80 100 -.01 4000 3900 ...
... Absorbance -30 0.2 + 0 5 .05- Cure No. 3 - Time .04 A Film Stress , MPa Cure No. 3 - Time 2 weeks .03 .02- Cure No. 15 - Time 0 .01 . Cure No. 15 - Time 2 weeks -35 0.0 + -40 0 20 40 Norm . SiH Bond Density , % 60 80 100 -.01 4000 3900 ...
Page 242
... Absorbance ( a.u. ) 0.15 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -0.02 -0.04 -0.06 SiF2 ( 980 cm ) -0.00 0.11010 1010 1000 980 980 960 ( 5.0 % ) ( 4.0 % ) ( 3.0 % ) ( 2.0 % ) ( 1.0 % ) SiF ( 940 cm - 1 ) CM - 101000 940 940 Wave number ( cm ...
... Absorbance ( a.u. ) 0.15 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -0.02 -0.04 -0.06 SiF2 ( 980 cm ) -0.00 0.11010 1010 1000 980 980 960 ( 5.0 % ) ( 4.0 % ) ( 3.0 % ) ( 2.0 % ) ( 1.0 % ) SiF ( 940 cm - 1 ) CM - 101000 940 940 Wave number ( cm ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch