Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 40
Page 6
In addition to improved adhesion , the alkoxysilane also improves the elongation to break of the cyclic polyolefin . The addition of the alkoxysilane increased the elongation to break of the polymer to approximately 16 % with 20 mol ...
In addition to improved adhesion , the alkoxysilane also improves the elongation to break of the cyclic polyolefin . The addition of the alkoxysilane increased the elongation to break of the polymer to approximately 16 % with 20 mol ...
Page 7
The elongation of the homopolymer doubled with the addition of the alkyl chains . The addition of the alkoxysilane norbornene further improved the elongation . At the highest levels of alkoxysilane examined , elongation to break values ...
The elongation of the homopolymer doubled with the addition of the alkyl chains . The addition of the alkoxysilane norbornene further improved the elongation . At the highest levels of alkoxysilane examined , elongation to break values ...
Page 164
This indicates that the addition of Al2O3 abrasive degrades the polished PA - N film . However , the addition of Al2O3 significantly increases the removal rate ( Table II ) . Both 164.
This indicates that the addition of Al2O3 abrasive degrades the polished PA - N film . However , the addition of Al2O3 significantly increases the removal rate ( Table II ) . Both 164.
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |