Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 6
In addition to improved adhesion , the alkoxysilane also improves the elongation
to break of the cyclic polyolefin . The addition of the alkoxysilane increased the
elongation to break of the polymer to approximately 16 % with 20 mol % of the ...
In addition to improved adhesion , the alkoxysilane also improves the elongation
to break of the cyclic polyolefin . The addition of the alkoxysilane increased the
elongation to break of the polymer to approximately 16 % with 20 mol % of the ...
Page 7
The elongation of the homopolymer doubled with the addition of the alkyl chains .
The addition of the alkoxysilane norbornene further improved the elongation . At
the highest levels of alkoxysilane examined , elongation to break values ...
The elongation of the homopolymer doubled with the addition of the alkyl chains .
The addition of the alkoxysilane norbornene further improved the elongation . At
the highest levels of alkoxysilane examined , elongation to break values ...
Page 164
... 95 195 150 CON ( 0 . 06 um diameter ) while slurry - 1 is abrasive free . This
indicates that the addition of Al2O3 abrasive degrades the polished PA - N film .
However , the addition of Al2O3 significantly increases the removal rate ( Table II
) .
... 95 195 150 CON ( 0 . 06 um diameter ) while slurry - 1 is abrasive free . This
indicates that the addition of Al2O3 abrasive degrades the polished PA - N film .
However , the addition of Al2O3 significantly increases the removal rate ( Table II
) .
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |