Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 4
The processing of polyimides typically requires the use of adhesion promoter . To
obtain sufficient adhesion to many materials , an adhesion promoter must first be
coated onto the substrate , resulting in additional processing steps . During ...
The processing of polyimides typically requires the use of adhesion promoter . To
obtain sufficient adhesion to many materials , an adhesion promoter must first be
coated onto the substrate , resulting in additional processing steps . During ...
Page 6
provided excellent adhesion of the film to aluminum and oxidized silicon . The
functionalized polymer also adhered to gold , copper , and silver without the use
of adhesion promoter and in the absence of any metal adhesion layers . In
addition ...
provided excellent adhesion of the film to aluminum and oxidized silicon . The
functionalized polymer also adhered to gold , copper , and silver without the use
of adhesion promoter and in the absence of any metal adhesion layers . In
addition ...
Page 82
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |