Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 9
Page 273
... alloy system that has attracted recent attention is Si - O - F . Alloy concentrations to ~ 10 to 15 at . % F have resulted in static dielectric constants ( Ɛs ) being reduced by 20 % [ 1-3 ] . IR data in Refs . 1,2 and 3 have provided ...
... alloy system that has attracted recent attention is Si - O - F . Alloy concentrations to ~ 10 to 15 at . % F have resulted in static dielectric constants ( Ɛs ) being reduced by 20 % [ 1-3 ] . IR data in Refs . 1,2 and 3 have provided ...
Page 274
... alloy mixture of SiO2 and Si2O3F2 , where a pseudo - binary alloy notation ( SiO2 ) x ( Si2O3F2 ) 1 - x is then appropriate . These alloys lie on the join - line between SiO2 and Si2O3F2 in a ternary composition diagram . Once the at ...
... alloy mixture of SiO2 and Si2O3F2 , where a pseudo - binary alloy notation ( SiO2 ) x ( Si2O3F2 ) 1 - x is then appropriate . These alloys lie on the join - line between SiO2 and Si2O3F2 in a ternary composition diagram . Once the at ...
Page 278
... alloy which exceeds the concentration discussed above , about 10 % of the Si - O - Si groups are removed , and the ... alloy density , 5 % for an alloy with 10-12 at . % F also contributes a factor of ~ 0.2 [ 4 ] . Combining these terms ...
... alloy which exceeds the concentration discussed above , about 10 % of the Si - O - Si groups are removed , and the ... alloy density , 5 % for an alloy with 10-12 at . % F also contributes a factor of ~ 0.2 [ 4 ] . Combining these terms ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch