Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 11
Page 22
... ambient in order to form void - free SiO2 . 2 ) Decomposition failure mode of SiO2 capped a - C : F The a - C : F thickness was reduced after annealing at 350 ° C , which is higher than the temperature of thermal stability of a - C : F ...
... ambient in order to form void - free SiO2 . 2 ) Decomposition failure mode of SiO2 capped a - C : F The a - C : F thickness was reduced after annealing at 350 ° C , which is higher than the temperature of thermal stability of a - C : F ...
Page 29
... ambient and remains at 3.0 or below even after 60 days . Accuglass Accuspin Inorganic HOSP T - 11 T - 18 Polymer Si - OH after cure yes no no no k at 1 MHz 3.8 2.7 2.9 2.5 Stable in ambient at 40 % no yes yes yes relative humidity 1 ...
... ambient and remains at 3.0 or below even after 60 days . Accuglass Accuspin Inorganic HOSP T - 11 T - 18 Polymer Si - OH after cure yes no no no k at 1 MHz 3.8 2.7 2.9 2.5 Stable in ambient at 40 % no yes yes yes relative humidity 1 ...
Page 106
... ambient . Curing was performed on the Recipe C films in an effort to promote adhesion between the xerogel and the silicon substrate . To avoid cracking during the curing process , it was found that aging of the films in ambient for two ...
... ambient . Curing was performed on the Recipe C films in an effort to promote adhesion between the xerogel and the silicon substrate . To avoid cracking during the curing process , it was found that aging of the films in ambient for two ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch