Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 35
Page 107
RESULTS The results of FTIR analysis which compares cured and uncured films
are presented as Figure 1 . For the uncured film ( the upper curve ) , absorption
due to hydroxyl groups are evident in peaks at 3400 cm and at approximately ...
RESULTS The results of FTIR analysis which compares cured and uncured films
are presented as Figure 1 . For the uncured film ( the upper curve ) , absorption
due to hydroxyl groups are evident in peaks at 3400 cm and at approximately ...
Page 257
To evaluate the thermal stability of the polyimide , thermal decomposition
temperature was obtained at 5 % weight loss using dynamic TGA analysis .
Figure 2 shows the thermogram of cured polyimide samples . According to the
TGA analysis ...
To evaluate the thermal stability of the polyimide , thermal decomposition
temperature was obtained at 5 % weight loss using dynamic TGA analysis .
Figure 2 shows the thermogram of cured polyimide samples . According to the
TGA analysis ...
Page 263
1 SIMS analysis showed high F conFSG / Ti and FSG / TiN wafers . The cross -
sectional centration at the ... However , SIMS diffusion into the Ti films . analysis
showed a high F content inside the Ti films ( see Fig . 1 ) . Unlike a normal
diffusion ...
1 SIMS analysis showed high F conFSG / Ti and FSG / TiN wafers . The cross -
sectional centration at the ... However , SIMS diffusion into the Ti films . analysis
showed a high F content inside the Ti films ( see Fig . 1 ) . Unlike a normal
diffusion ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer