Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 22
... annealing at 350 ° C , which is higher than the temperature of thermal stability of a - C : F at 300 ° C [ 5 ] . In the oxygen plasma annealing test after 350 ° C annealing in a vacuum , we found two additional adhesion degradation ...
... annealing at 350 ° C , which is higher than the temperature of thermal stability of a - C : F at 300 ° C [ 5 ] . In the oxygen plasma annealing test after 350 ° C annealing in a vacuum , we found two additional adhesion degradation ...
Page 64
B. Annealing to 600 K 13 Annealing to 600 K resulted in an obvious change in the lineshape of the Cu ( L3VV ) Auger peak , with a peak maximum shifting toward higher kinetic energy ( lower BE ) . The Cu ( 2P3 / 2 ) peak also shifts ...
B. Annealing to 600 K 13 Annealing to 600 K resulted in an obvious change in the lineshape of the Cu ( L3VV ) Auger peak , with a peak maximum shifting toward higher kinetic energy ( lower BE ) . The Cu ( 2P3 / 2 ) peak also shifts ...
Page 227
... annealing to 250 ° C for several anneal times . The a peak does not grow during the 250 ° C anneal as it did in the 200 ° C anneal , but a large ẞ peak grows in both films as expected . The behavior of the a peak at various anneal times ...
... annealing to 250 ° C for several anneal times . The a peak does not grow during the 250 ° C anneal as it did in the 200 ° C anneal , but a large ẞ peak grows in both films as expected . The behavior of the a peak at various anneal times ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch