Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 47
Page 22
2 ) Decomposition failure mode of Sio , capped a - C : F The a - C : F thickness
was reduced after annealing at 350°C , which is higher than the temperature of
thermal stability of a - C : F at 300°C [ 5 ] . In the oxygen plasma annealing test
after ...
2 ) Decomposition failure mode of Sio , capped a - C : F The a - C : F thickness
was reduced after annealing at 350°C , which is higher than the temperature of
thermal stability of a - C : F at 300°C [ 5 ] . In the oxygen plasma annealing test
after ...
Page 64
B . Annealing to 600 K Annealing to 600 K resulted in an obvious change in the
lineshape of the Cu ( L3VV ) Auger peak , with a peak maximum shifting toward
higher kinetic energy ( lower BE ) . The Cu ( 232 ) peak also shifts slightly ( by
less ...
B . Annealing to 600 K Annealing to 600 K resulted in an obvious change in the
lineshape of the Cu ( L3VV ) Auger peak , with a peak maximum shifting toward
higher kinetic energy ( lower BE ) . The Cu ( 232 ) peak also shifts slightly ( by
less ...
Page 227
Figures 2 and 3 show the X - ray spectra of the control film and process PC film ,
respectively , before and after annealing to 250 °C for several anneal times . The
a peak does not grow during the 250 °C anneal as it did in the 200 °C anneal ...
Figures 2 and 3 show the X - ray spectra of the control film and process PC film ,
respectively , before and after annealing to 250 °C for several anneal times . The
a peak does not grow during the 250 °C anneal as it did in the 200 °C anneal ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer