Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 113
LOW DIELECTRIC CONSTANT FLUORINATED POLYIMIDES FOR INTERLAYER DIELECTRIC APPLICATIONS 9 John Pellerin * , Robert Fox and Huei - Min Ho ** , SEMATECH , 2706 Montopolis Drive , Austin , TX 78741 * On Assignment from AMD , Inc. , Austin ...
LOW DIELECTRIC CONSTANT FLUORINATED POLYIMIDES FOR INTERLAYER DIELECTRIC APPLICATIONS 9 John Pellerin * , Robert Fox and Huei - Min Ho ** , SEMATECH , 2706 Montopolis Drive , Austin , TX 78741 * On Assignment from AMD , Inc. , Austin ...
Page 219
CHARACTERIZATION OF PARYLENE - N THIN FILMS FOR LOW - K VLSI APPLICATIONS STEVEN C. SELBREDE , MARTIN L. ZUCKER Mattson Technology , Inc. , 3550 W. Warren Avenue , Fremont , CA , 94538 ABSTRACT Parylene - N thin films were characterized ...
CHARACTERIZATION OF PARYLENE - N THIN FILMS FOR LOW - K VLSI APPLICATIONS STEVEN C. SELBREDE , MARTIN L. ZUCKER Mattson Technology , Inc. , 3550 W. Warren Avenue , Fremont , CA , 94538 ABSTRACT Parylene - N thin films were characterized ...
Page 254
C. H. Ting and T. E. Seidel , in Low Dielectric Constant Materials , Synthesis and Applications in Microelectronics , edited by T. M. Lu , S. P. Murarka , T. S. Kuan and C. H. Ting ( Mater . Res . Soc . Proc.381 , Pittsburg , PA , 1995 ) ...
C. H. Ting and T. E. Seidel , in Low Dielectric Constant Materials , Synthesis and Applications in Microelectronics , edited by T. M. Lu , S. P. Murarka , T. S. Kuan and C. H. Ting ( Mater . Res . Soc . Proc.381 , Pittsburg , PA , 1995 ) ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer