Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 28
Page 73
... atoms were desorbed from the SiOF film deposited with Ar gas during any process which operates at relatively high temperature . And those fluorine atoms diffused into under - layer and reacted with underlying TiSi2 resulting in forming ...
... atoms were desorbed from the SiOF film deposited with Ar gas during any process which operates at relatively high temperature . And those fluorine atoms diffused into under - layer and reacted with underlying TiSi2 resulting in forming ...
Page 273
... atoms , leading to the characterization of this system as a pseudo - binary alloy . The IR studies have shown that F atoms are incorporated in monofluoride ( Si - F ) groups so that the pseudo - binary alloy in the range of experimental ...
... atoms , leading to the characterization of this system as a pseudo - binary alloy . The IR studies have shown that F atoms are incorporated in monofluoride ( Si - F ) groups so that the pseudo - binary alloy in the range of experimental ...
Page 274
... atoms being i ) ' isolated ' in the context that they are on Si atoms that are separated by one or more O - Si - O groups , ii ) at least paired ; i.e. , on Si atoms that are connected through a single O atom , and iii ) more strongly ...
... atoms being i ) ' isolated ' in the context that they are on Si atoms that are separated by one or more O - Si - O groups , ii ) at least paired ; i.e. , on Si atoms that are connected through a single O atom , and iii ) more strongly ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch