Low-Dielectric Constant Materials III:C. Case, T. Kikkawa, P. Kohl, W. W. Lee Continuing improvement of integrated circuits (ICs) critically depends on the use of nonconventional materials. Interconnect delay is already the most severe limiting factor in most advanced IC. This delay can be minimized by reducing the interconnect capacitance, which is determined by a combination of process architecture and materials. While a broad range of candidate materials is being explored for IC application, there is no clear consensus on what material will be used to replace SiO2. Process architectures are also unsettled, with various efforts directed to either evolving present-day technology or switching to a damascene metal approach. Yet these processes may not be scaleable beyond the 0.15 µm generation of IC technology. This book brings together experts in the field of low-k dielectrics to focus on the challenges ahead. Topics include: organic and inorganic dielectrics; interfaces and porous materials; measurement and characterization; vapor-deposited materials; fluorinated oxides and polyimides. |
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Page 35
The presence of fluorine as a network-terminating end-group may inhibit cross-
linking by its lower dissociation probability relative to hydrogen. A lower degree
of cross-linking in the film increases the likelihood that a given collection of atoms
...
The presence of fluorine as a network-terminating end-group may inhibit cross-
linking by its lower dissociation probability relative to hydrogen. A lower degree
of cross-linking in the film increases the likelihood that a given collection of atoms
...
Page 273
Alloying of F atoms into plasma-deposited SiQ2 films leads to major changes in
the SiO2 bond-stretching and -bending infrared bands accounting for a
significant fraction of the reduction in the dielectric constant. These changes are
explained ...
Alloying of F atoms into plasma-deposited SiQ2 films leads to major changes in
the SiO2 bond-stretching and -bending infrared bands accounting for a
significant fraction of the reduction in the dielectric constant. These changes are
explained ...
Page 274
1(b) contains the atomic fractions, [Si], [O] and [F], each as functions of the alloy
composition x [3]. The same model (see Fig. 1(c)) has also been used to
calculate the statistical probability for F atoms being i) 'isolated' in the context that
they are ...
1(b) contains the atomic fractions, [Si], [O] and [F], each as functions of the alloy
composition x [3]. The same model (see Fig. 1(c)) has also been used to
calculate the statistical probability for F atoms being i) 'isolated' in the context that
they are ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
SiLK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1997 Materials Research adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical CMP process coating copolymers cured films curve decrease delamination density device dielectric constant dielectric material diffusion e-beam cured electron Figure film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N passivation peak PECVD permittivity planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si SiF4 silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch
Bibliographic information
| Title | Low-Dielectric Constant Materials III: Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Editors | C. Case, T. Kikkawa, P. Kohl, W. W. Lee |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Length | 300 pages |
| Subjects | › Technology & Engineering / Materials Science Technology & Engineering / Superconductors & Superconductivity |
| Export Citation | BiBTeX EndNote RefMan |