Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 19
Page 73
( atoms / cc ) 1 . 00E + 22 1 . 00E + 21 1 . 00E + 20 1 . 00E + 19 1 . 00E + 18 F
conc . ( atoms / cc ) í Siofi 1 . 00E + 20 1 . 00E + 19 BPSG BPSG Sio2 WITIN AM
SiO2 1 . 00E + 18 BPSG WITIN 1 . 00E + 17 1 . 00E + 17 L 6 . 0 0 . 0 2 . 0 4 . 0 6 .
0 0 .
( atoms / cc ) 1 . 00E + 22 1 . 00E + 21 1 . 00E + 20 1 . 00E + 19 1 . 00E + 18 F
conc . ( atoms / cc ) í Siofi 1 . 00E + 20 1 . 00E + 19 BPSG BPSG Sio2 WITIN AM
SiO2 1 . 00E + 18 BPSG WITIN 1 . 00E + 17 1 . 00E + 17 L 6 . 0 0 . 0 2 . 0 4 . 0 6 .
0 0 .
Page 273
The IR studies have shown that F atoms are incorporated in monofluoride ( Si - F
) groups so that the pseudo - binary alloy in the range of experimental interest is (
SiO2 ) x ( Si2O3F2 ) 1 - x ( 3 ) . Recent results have established the major ...
The IR studies have shown that F atoms are incorporated in monofluoride ( Si - F
) groups so that the pseudo - binary alloy in the range of experimental interest is (
SiO2 ) x ( Si2O3F2 ) 1 - x ( 3 ) . Recent results have established the major ...
Page 274
The number of Si - O bonds / Si atom ( Nsi - o ) is equal to ( 6 - 2x ) / ( 2 - x ) , and
the number of Si - F bonds / Si atom ... 1 ( c ) ) has also been used to calculate the
statistical probability for F atoms being i ) ' isolated ' in the context that they are ...
The number of Si - O bonds / Si atom ( Nsi - o ) is equal to ( 6 - 2x ) / ( 2 - x ) , and
the number of Si - F bonds / Si atom ... 1 ( c ) ) has also been used to calculate the
statistical probability for F atoms being i ) ' isolated ' in the context that they are ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer