Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 26
... band centered at 3371 cm1 . In addition there are bands assigned to the methyl groups at 2976 cm1 ( C - H stretch ) , 1276 cm1 ( Si - C stretch ) and siloxane groups at 1097 cm1 ( Si - O - Si ) and 926 cm1 ( Si - O - H ) . During the ...
... band centered at 3371 cm1 . In addition there are bands assigned to the methyl groups at 2976 cm1 ( C - H stretch ) , 1276 cm1 ( Si - C stretch ) and siloxane groups at 1097 cm1 ( Si - O - Si ) and 926 cm1 ( Si - O - H ) . During the ...
Page 34
... band , at the high wavenumber shoulder of the 1200 cm band , in the shape of the 1650 cm1 band and in the height of the 1800 cm1 band . The major differences in the two spectra include the increase in the 1200 cm1 band relative to the 1150 ...
... band , at the high wavenumber shoulder of the 1200 cm band , in the shape of the 1650 cm1 band and in the height of the 1800 cm1 band . The major differences in the two spectra include the increase in the 1200 cm1 band relative to the 1150 ...
Page 35
... band decreases upon heating indicates that the molecular groups that make up this band are decreasing . Since this band is the only portion of the spectrum in which fluorine - containing stretching motion absorb , it is likely that ...
... band decreases upon heating indicates that the molecular groups that make up this band are decreasing . Since this band is the only portion of the spectrum in which fluorine - containing stretching motion absorb , it is likely that ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch