Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 14
Page 265
... barriers to prevent F from diffusing to the metals or to the transistors . VAZ 15 - MAR - 38 ME5887.1 # 4 GLOBAL 15 ... barrier between the FSG and TiSi2 , no discoloration was observed in the poly - Si / TiSi2 areas after the intensive ...
... barriers to prevent F from diffusing to the metals or to the transistors . VAZ 15 - MAR - 38 ME5887.1 # 4 GLOBAL 15 ... barrier between the FSG and TiSi2 , no discoloration was observed in the poly - Si / TiSi2 areas after the intensive ...
Page 266
... barriers , metal blistering and TiSi2 delamination will occur . SIMS data showed that PECVD silicon nitride is a better diffusion barrier than oxide films . Using 2000 Å of PECVD silicon nitride and 3000 Å of TEOS oxide as diffusion ...
... barriers , metal blistering and TiSi2 delamination will occur . SIMS data showed that PECVD silicon nitride is a better diffusion barrier than oxide films . Using 2000 Å of PECVD silicon nitride and 3000 Å of TEOS oxide as diffusion ...
Page 267
... barrier layer . INTRODUCTION Fluorinated silicon oxide ( SiOF ) thin films have aroused vast interest in recent years due to their lower dielectric constant ( down to ~ 3.2 ) which is desirable for future inter - metal dielectric ( IMD ) ...
... barrier layer . INTRODUCTION Fluorinated silicon oxide ( SiOF ) thin films have aroused vast interest in recent years due to their lower dielectric constant ( down to ~ 3.2 ) which is desirable for future inter - metal dielectric ( IMD ) ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch