Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 42
Page 167
... bond is about the same except that a little more absorbed oxygen on the surface after 20 s polishing . The results ... bond ) and another is located at about 286.3 eV , which has a positive chemical shift of approximately 1.3 eV with ...
... bond is about the same except that a little more absorbed oxygen on the surface after 20 s polishing . The results ... bond ) and another is located at about 286.3 eV , which has a positive chemical shift of approximately 1.3 eV with ...
Page 273
... bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the ... bond - stretching mode where the O atom moves in the Si - O - Si bonding plane in a direction parallel to a line joining its ...
... bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the ... bond - stretching mode where the O atom moves in the Si - O - Si bonding plane in a direction parallel to a line joining its ...
Page 277
... bond angle ( B ) and other bond angles down to 100 degrees . Fig . 2 includes a schematic representation of the local clusters used in this calculation . There is no significant difference in this energy difference for Si - O - Si bond ...
... bond angle ( B ) and other bond angles down to 100 degrees . Fig . 2 includes a schematic representation of the local clusters used in this calculation . There is no significant difference in this energy difference for Si - O - Si bond ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch