Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 42
Page 167
The ratio of C - O bond to C - C bond is about the same except that a little more absorbed oxygen on the surface after 20 s polishing . The results are similar for high quality PA - N film as shown in Table II ( discussed above ) after ...
The ratio of C - O bond to C - C bond is about the same except that a little more absorbed oxygen on the surface after 20 s polishing . The results are similar for high quality PA - N film as shown in Table II ( discussed above ) after ...
Page 273
1,2 and 3 have provided the basis for identifying local bonding arrangements of the F ... the O atom relative to the two Si neighbors : i ) a bond - stretching mode where the O atom moves in the Si - O - Si bonding plane in a direction ...
1,2 and 3 have provided the basis for identifying local bonding arrangements of the F ... the O atom relative to the two Si neighbors : i ) a bond - stretching mode where the O atom moves in the Si - O - Si bonding plane in a direction ...
Page 277
2 displays the energy difference between the minimum value for a 180 degree Si - O - Si bond angle ( B ) and other bond angles down to 100 degrees . Fig . 2 includes a schematic representation of the local clusters used in this ...
2 displays the energy difference between the minimum value for a 180 degree Si - O - Si bond angle ( B ) and other bond angles down to 100 degrees . Fig . 2 includes a schematic representation of the local clusters used in this ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer