Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 118
13 The capacitance shift parameter in Table III refers to the difference in
capacitance before ( i . e . line - to - line capacitance measured prior to dielectric
deposition ) and after FPI or PE - TEOS dielectric is deposited . The capacitance ...
13 The capacitance shift parameter in Table III refers to the difference in
capacitance before ( i . e . line - to - line capacitance measured prior to dielectric
deposition ) and after FPI or PE - TEOS dielectric is deposited . The capacitance ...
Page 139
Capacitance Measurements The out - of - plane dielectric constant , Eout , at 1
MHz was determined using MetalInsulator - Metal ( MIM ) structures as parallel
plate capacitors . A 4000 Å Al ( Cu ) film is deposited on a 3 in . Si wafer . A ~ lum
...
Capacitance Measurements The out - of - plane dielectric constant , Eout , at 1
MHz was determined using MetalInsulator - Metal ( MIM ) structures as parallel
plate capacitors . A 4000 Å Al ( Cu ) film is deposited on a 3 in . Si wafer . A ~ lum
...
Page 143
... and the surface charge . From these the total capacitance between the lines
including the fringe capacitance is determined . The in - plane dielectric constant
is extracted by comparing the experimentally measured total capacitance ...
... and the surface charge . From these the total capacitance between the lines
including the fringe capacitance is determined . The in - plane dielectric constant
is extracted by comparing the experimentally measured total capacitance ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |