Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 13
Page 19
... carbon ( a - C : F ) films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric ( ILD ) structure in order to enhance resistance to oxygen plasma . This study describes adhesion failure mechanisms for the ...
... carbon ( a - C : F ) films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric ( ILD ) structure in order to enhance resistance to oxygen plasma . This study describes adhesion failure mechanisms for the ...
Page 28
... carbon and so there are traces of carbon in the films during processing . Like the methylsilsesquioxanes , these materials are more crack resistant than methylsiloxanes . A typical inorganic polymer can be used for narrow gap - fill and ...
... carbon and so there are traces of carbon in the films during processing . Like the methylsilsesquioxanes , these materials are more crack resistant than methylsiloxanes . A typical inorganic polymer can be used for narrow gap - fill and ...
Page 35
... carbon [ 4,8 ] . The presence of fluorine as a network - terminating end - group may inhibit cross - linking by its lower dissociation probability relative to hydrogen . A lower degree of cross - linking in the film increases the ...
... carbon [ 4,8 ] . The presence of fluorine as a network - terminating end - group may inhibit cross - linking by its lower dissociation probability relative to hydrogen . A lower degree of cross - linking in the film increases the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch