Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-2 of 2
Page 45
... cathode provides superior RF efficiency for higher etch rate and throughput . The use of an electrostatic chuck ( ESC ) improves edge exclusion ( 3 mm ) . Helium wafer backside cooling offers better temperature control and uniformity ...
... cathode provides superior RF efficiency for higher etch rate and throughput . The use of an electrostatic chuck ( ESC ) improves edge exclusion ( 3 mm ) . Helium wafer backside cooling offers better temperature control and uniformity ...
Page 122
... cathode gas source produces a large area electron beam ( over 200 mm in diameter ) having a substantially uniform emission over its entire surface . Electron emission can be controlled by the low bias voltage applied to the anode grid ...
... cathode gas source produces a large area electron beam ( over 200 mm in diameter ) having a substantially uniform emission over its entire surface . Electron emission can be controlled by the low bias voltage applied to the anode grid ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch