Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 9
SILK POLYMER COATING WITH LOW DIELECTRIC CONSTANT AND HIGH THERMAL STABILITY FOR ULSI INTERLAYER DIELECTRIC P. H. TOWNSEND , S. J. Martin , J. Godschalx , D. R. Romer , D. W. Smith , Jr. , D. Castillo , R. DeVries , G. Buske , N. Rondan ...
SILK POLYMER COATING WITH LOW DIELECTRIC CONSTANT AND HIGH THERMAL STABILITY FOR ULSI INTERLAYER DIELECTRIC P. H. TOWNSEND , S. J. Martin , J. Godschalx , D. R. Romer , D. W. Smith , Jr. , D. Castillo , R. DeVries , G. Buske , N. Rondan ...
Page 10
EXPERIMENTAL Sample Preparation Polymer coatings on silicon wafers were prepared by conventional spin coating and thermal curing . Spin coating was performed on a CEE Model 4000 bench top spin coater . Prepolymer solution was dispensed ...
EXPERIMENTAL Sample Preparation Polymer coatings on silicon wafers were prepared by conventional spin coating and thermal curing . Spin coating was performed on a CEE Model 4000 bench top spin coater . Prepolymer solution was dispensed ...
Page 52
Heat treatment of Chemat - B coatings in different atmospheres at different temperatures with different heating ... Two weight percent of photo - initiator was added to the coating solution to increase the photo - sensitivity of the ...
Heat treatment of Chemat - B coatings in different atmospheres at different temperatures with different heating ... Two weight percent of photo - initiator was added to the coating solution to increase the photo - sensitivity of the ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer