Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 21
Page 9
... coefficient of thermal expansivity is 66 ppm / ° C below the glass transition temperature . The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature . The fracture toughness measured on thin films is 0.62 MPa m2 ...
... coefficient of thermal expansivity is 66 ppm / ° C below the glass transition temperature . The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature . The fracture toughness measured on thin films is 0.62 MPa m2 ...
Page 258
... coefficient of 0.92 ( R2 ) . 1200 Force ( mN ) 1000 800 600 400 200 O 0.0 0.2 0.4 0.6 0.8 1.0 Penetration ( um ) Fig ... coefficients of thermal expansions ( CTE or a ) between the polyimide and silicon . The equation used to describe ...
... coefficient of 0.92 ( R2 ) . 1200 Force ( mN ) 1000 800 600 400 200 O 0.0 0.2 0.4 0.6 0.8 1.0 Penetration ( um ) Fig ... coefficients of thermal expansions ( CTE or a ) between the polyimide and silicon . The equation used to describe ...
Page 260
... coefficient of 20x10-6 / ° C . This results in a low stress ( < 26 MPa ) in the polyimide film measured in situ in curing and cooling cycles . The polyimide films exhibit optical anisotropy with the average in - plane refractive index ...
... coefficient of 20x10-6 / ° C . This results in a low stress ( < 26 MPa ) in the polyimide film measured in situ in curing and cooling cycles . The polyimide films exhibit optical anisotropy with the average in - plane refractive index ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch