Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 65
3 ) compared to that observed after annealing on the clean Teflon - AF surface ( Fig . 2 ) , indicates a mixture of Cu ( I ) and Cu ( O ) . This in turn demonstrates that the formation of Cu ( 0 ) from Cu ( I ) hfac is hindered on the ...
3 ) compared to that observed after annealing on the clean Teflon - AF surface ( Fig . 2 ) , indicates a mixture of Cu ( I ) and Cu ( O ) . This in turn demonstrates that the formation of Cu ( 0 ) from Cu ( I ) hfac is hindered on the ...
Page 118
system 2 were compared to those obtained from a single - level metal interconnect test structure incorporating PE - TEOS dielectric as listed in Table III . Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) ...
system 2 were compared to those obtained from a single - level metal interconnect test structure incorporating PE - TEOS dielectric as listed in Table III . Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) ...
Page 124
Compared to the thermal cure , the e - beam cure leads to a higher refractive index . Increasing the e - beam dose from 3 to 10 mC / cm'causes the refractive index to increase significantly compared to the thermal cure .
Compared to the thermal cure , the e - beam cure leads to a higher refractive index . Increasing the e - beam dose from 3 to 10 mC / cm'causes the refractive index to increase significantly compared to the thermal cure .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |