Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 65
... compared to that observed after annealing on the clean Teflon - AF surface ( Fig . 2 ) , indicates a mixture of Cu ( I ) and Cu ( 0 ) . This in turn demonstrates that the formation of Cu ( 0 ) from Cu ( I ) hfac is hindered on the ...
... compared to that observed after annealing on the clean Teflon - AF surface ( Fig . 2 ) , indicates a mixture of Cu ( I ) and Cu ( 0 ) . This in turn demonstrates that the formation of Cu ( 0 ) from Cu ( I ) hfac is hindered on the ...
Page 118
... compared to conventional PE - TEOS dielectric Dielectric FPI + Add . 2 PE - TEOS Leakage Current ( pA ) Line - to - line Capacitance ( pF ) Capacitance Shift ( pF ) ε 2.03 4.56 5.56 2.93 ( line - to - line ) 2.77 +/- 0.18 8.84 6.36 4.35 ...
... compared to conventional PE - TEOS dielectric Dielectric FPI + Add . 2 PE - TEOS Leakage Current ( pA ) Line - to - line Capacitance ( pF ) Capacitance Shift ( pF ) ε 2.03 4.56 5.56 2.93 ( line - to - line ) 2.77 +/- 0.18 8.84 6.36 4.35 ...
Page 124
... Compared to the thermal cure , the e - beam cure leads to a higher refractive index . Increasing the e - beam dose from 3 to 10 mC / cm2 causes the refractive index to increase significantly compared to the thermal cure . Still higher ...
... Compared to the thermal cure , the e - beam cure leads to a higher refractive index . Increasing the e - beam dose from 3 to 10 mC / cm2 causes the refractive index to increase significantly compared to the thermal cure . Still higher ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch