Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 241
However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due to a change in Si - O bonding configuration from ...
However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due to a change in Si - O bonding configuration from ...
Page 242
The lack of a decrease in k with increasing Si - F concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa ...
The lack of a decrease in k with increasing Si - F concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa ...
Page 247
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better .
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer