Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 241
... concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due to a change in Si ...
... concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due to a change in Si ...
Page 242
... concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiF , doped FTEOS films . With increasing Si - F ...
... concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiF , doped FTEOS films . With increasing Si - F ...
Page 247
... concentration of 2.5 % are recommended . At concentrations higher than 3 % the FTEOS films become unstable . We have identified the presence of Si - F2 bonds as the reason for this instability . Even though fluorine doping enhances the ...
... concentration of 2.5 % are recommended . At concentrations higher than 3 % the FTEOS films become unstable . We have identified the presence of Si - F2 bonds as the reason for this instability . Even though fluorine doping enhances the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch