Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 35
... containing stretching motion absorb , it is likely that fluorine - containing groups are leaving the film . Changes in infrared spectra supports the idea that the material undergoes substantial microstructural changes upon heating as ...
... containing stretching motion absorb , it is likely that fluorine - containing groups are leaving the film . Changes in infrared spectra supports the idea that the material undergoes substantial microstructural changes upon heating as ...
Page 64
... containing mainly Al - O but also Al - F and Al - C bonds , as reported previously . The " aluminized ” Teflon - AF was then exposed to 10,000 L Cu ( I ) hfac ( COD ) at low temperature ( ~ 110 K ) . The low- temperature spectra ...
... containing mainly Al - O but also Al - F and Al - C bonds , as reported previously . The " aluminized ” Teflon - AF was then exposed to 10,000 L Cu ( I ) hfac ( COD ) at low temperature ( ~ 110 K ) . The low- temperature spectra ...
Page 93
... containing various amounts of labile block were obtained though we concentrated our efforts on copolymers containing 15-30 % ( vol ) labile block with the hope that these would afford the best nanofoams . Thin film foams were generated ...
... containing various amounts of labile block were obtained though we concentrated our efforts on copolymers containing 15-30 % ( vol ) labile block with the hope that these would afford the best nanofoams . Thin film foams were generated ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch