Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 56
Table 2 shows the cost prediction for a 8 " wafer with .25 mm process . Interconnect portion counted about 54 % of the total wafer manufacturing cost . By comparing the dual damascene process by this direct - patterning low k ...
Table 2 shows the cost prediction for a 8 " wafer with .25 mm process . Interconnect portion counted about 54 % of the total wafer manufacturing cost . By comparing the dual damascene process by this direct - patterning low k ...
Page 179
Wright Williams & Kelly's TWOCOOLTM cost - of - ownership software package , commercialized from SEMATECH and compliant to ... TWOCOOL default values were used ( including administrative rates such as labor and cleanroom area costs ) .
Wright Williams & Kelly's TWOCOOLTM cost - of - ownership software package , commercialized from SEMATECH and compliant to ... TWOCOOL default values were used ( including administrative rates such as labor and cleanroom area costs ) .
Page 180
The polled suppliers stated that IaLD gap - fill precursor material costs would be within + 25 % , thus justifying one calculation for all SODs . The a - CF precursor cost was assumed to be equal to SiOF's . The SOD throughput ( perhaps ...
The polled suppliers stated that IaLD gap - fill precursor material costs would be within + 25 % , thus justifying one calculation for all SODs . The a - CF precursor cost was assumed to be equal to SiOF's . The SOD throughput ( perhaps ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer