Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 19
Page 37
... temperature , time , and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane . Results of the study emphasize the importance of an inert environment during the baseline recommended cure ...
... temperature , time , and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane . Results of the study emphasize the importance of an inert environment during the baseline recommended cure ...
Page 40
... Cure conditions with lowest dielectric constant are observed at temperature of 350 ° C , irrespective of oxygen concentration , and at 400 ° C , with a practically inert environment . While conversion of SiH bonds to silica results in ...
... Cure conditions with lowest dielectric constant are observed at temperature of 350 ° C , irrespective of oxygen concentration , and at 400 ° C , with a practically inert environment . While conversion of SiH bonds to silica results in ...
Page 125
... Cure 0.02 0.00 0.00 -0.02 -0.02 2.04 -0.04 4000 3800 3000 3400 3200 3000 2800 2000 2400 2200 2000 1800 1600 1400 ... Temperature Figs . 3-5 show the results for the stress - temperature cycling tests performed on the films after thermal ...
... Cure 0.02 0.00 0.00 -0.02 -0.02 2.04 -0.04 4000 3800 3000 3400 3200 3000 2800 2000 2400 2200 2000 1800 1600 1400 ... Temperature Figs . 3-5 show the results for the stress - temperature cycling tests performed on the films after thermal ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch