Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 56
Page 106
The organic modification led to films that were able to be cured without cracking .
Curing leads to the desorption of hydrophilic hydroxyl groups and the evolution of
water . This also promotes condensation in the formation of siloxane bonds ...
The organic modification led to films that were able to be cured without cracking .
Curing leads to the desorption of hydrophilic hydroxyl groups and the evolution of
water . This also promotes condensation in the formation of siloxane bonds ...
Page 121
Spin - coated films of this poly ( arylene ether ) were cured by large - area e -
beam exposure , as well as by conventional thermal processing . Neither
swelling nor dissolution was observed for the e - beam cured films after
immersion in N ...
Spin - coated films of this poly ( arylene ether ) were cured by large - area e -
beam exposure , as well as by conventional thermal processing . Neither
swelling nor dissolution was observed for the e - beam cured films after
immersion in N ...
Page 124
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer