Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 106
The organic modification led to films that were able to be cured without cracking . Curing leads to the desorption of hydrophilic hydroxyl groups and the evolution of water . This also promotes condensation in the formation of siloxane ...
The organic modification led to films that were able to be cured without cracking . Curing leads to the desorption of hydrophilic hydroxyl groups and the evolution of water . This also promotes condensation in the formation of siloxane ...
Page 107
RESULTS The results of FTIR analysis which compares cured and uncured films are presented as Figure 1. For the uncured film ( the upper curve ) , absorption due to hydroxyl groups are evident in peaks at 3400 cm ' and at approximately ...
RESULTS The results of FTIR analysis which compares cured and uncured films are presented as Figure 1. For the uncured film ( the upper curve ) , absorption due to hydroxyl groups are evident in peaks at 3400 cm ' and at approximately ...
Page 124
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage and stress data obtained at room temperature for thermally - cured and e - beam cured films are summarized in Table 2. Compared to the thermal cure , the e - beam ...
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage and stress data obtained at room temperature for thermally - cured and e - beam cured films are summarized in Table 2. Compared to the thermal cure , the e - beam ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer