Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 227
The bending beam thermal stress measurements show a large hysteresis that occurs after the first thermal cycle ( first heating and cooling curve ) , Figure 5. No hysteresis is observed in subsequent thermal cycles which nearly overlay ...
The bending beam thermal stress measurements show a large hysteresis that occurs after the first thermal cycle ( first heating and cooling curve ) , Figure 5. No hysteresis is observed in subsequent thermal cycles which nearly overlay ...
Page 229
80 First Thermal Cycle 60 Cooling Cycle Stress Inflection 40 Stress ( MPa ) 20 0 -20 Heating Cycle A -40 0 50 100 150 200 250 300 350 400 Temperature ( ° C ) Third Thermal Cycle 20 Cooling Curve Stress Inflection 10 Stress ( MPa ) 0 ...
80 First Thermal Cycle 60 Cooling Cycle Stress Inflection 40 Stress ( MPa ) 20 0 -20 Heating Cycle A -40 0 50 100 150 200 250 300 350 400 Temperature ( ° C ) Third Thermal Cycle 20 Cooling Curve Stress Inflection 10 Stress ( MPa ) 0 ...
Page 269
the first nicioses 500 500 1st cycle 2nd cycle a 3rd cycle Deneta o 1st cycle 2nd cycle 3rd cycle 400 after seg mobine alculaz . 400 300 Stress ( MPa ) Stress ( MPa ) 300 200 llo ide na ) are 200 0 100 200 ped !
the first nicioses 500 500 1st cycle 2nd cycle a 3rd cycle Deneta o 1st cycle 2nd cycle 3rd cycle 400 after seg mobine alculaz . 400 300 Stress ( MPa ) Stress ( MPa ) 300 200 llo ide na ) are 200 0 100 200 ped !
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |