Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 51
... Damascene and dual damascene processes were proposed using this new low - k material , which can be much simpler compared to the traditional process . INTRODUCTION To decrease device dimensions from 0.35μm in 1995 to 0.1μm in 2007 ...
... Damascene and dual damascene processes were proposed using this new low - k material , which can be much simpler compared to the traditional process . INTRODUCTION To decrease device dimensions from 0.35μm in 1995 to 0.1μm in 2007 ...
Page 56
... damascene process using this Chemat - B polymer was proposed in Fig . 5. Conventional or advanced lithography ( such as e - beam , ions , X - ray ) should be able to be use to pattern the Chemat - B films . Photoresists and related ...
... damascene process using this Chemat - B polymer was proposed in Fig . 5. Conventional or advanced lithography ( such as e - beam , ions , X - ray ) should be able to be use to pattern the Chemat - B films . Photoresists and related ...
Page 180
... damascene have equivalent dielectric requirements ; the main trade - offs between damascene metallization and lithography are not considered here . Also , a - CF under- and over - coats are assumed to be deposited in - situ , and thus ...
... damascene have equivalent dielectric requirements ; the main trade - offs between damascene metallization and lithography are not considered here . Also , a - CF under- and over - coats are assumed to be deposited in - situ , and thus ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch