Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 85
component and by the decrease of a random component . The random ... The
post - deposition annealing decreased the resistivity by about 40 - 50 % . ...
CuTi2 ) , and interfacial layer formation can influence the resistivity decrease ( Fig
. 7 ) .
component and by the decrease of a random component . The random ... The
post - deposition annealing decreased the resistivity by about 40 - 50 % . ...
CuTi2 ) , and interfacial layer formation can influence the resistivity decrease ( Fig
. 7 ) .
Page 241
The dielectric constant of the as - deposited films decreases from 4 . 20 to 3 . 42
with the increase of Si - F concentration from 0 to 3 % . However , with further
increase of Si - F concentration to 5 % , K only decreases to 3 . 38 . A decrease in
...
The dielectric constant of the as - deposited films decreases from 4 . 20 to 3 . 42
with the increase of Si - F concentration from 0 to 3 % . However , with further
increase of Si - F concentration to 5 % , K only decreases to 3 . 38 . A decrease in
...
Page 278
1 - 3 , it is obvious that the reduction in the Si - O - Si vibrational mode
contributions to Es from the substitution of one F atom for one 0 atom is
insufficient to account for the relatively large decreases in Es . For example , in a
12 at . % F alloy ...
1 - 3 , it is obvious that the reduction in the Si - O - Si vibrational mode
contributions to Es from the substitution of one F atom for one 0 atom is
insufficient to account for the relatively large decreases in Es . For example , in a
12 at . % F alloy ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer