Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 85
... decrease ( Fig . 7 ) . We note here that both the resistivity and its decrease after the annealing process are affected by the plasma pre - treatment . Plasma pre - treatment increased the resistivity of as- deposited films , while it ...
... decrease ( Fig . 7 ) . We note here that both the resistivity and its decrease after the annealing process are affected by the plasma pre - treatment . Plasma pre - treatment increased the resistivity of as- deposited films , while it ...
Page 241
... decreases from 4.20 to 3.42 with the increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F ...
... decreases from 4.20 to 3.42 with the increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F ...
Page 278
... decrease in εs from removal of these groups is about 10 % of dɛ = 0.1 ( εs - Ɛo ) 0.10 ( 4.1 - 2.1 ) or ~ 0.2 , whereas the reported decrease in ɛs is approximately 0.8 [ 1,2 ] . This zeroth order calculation actually over estimates the ...
... decrease in εs from removal of these groups is about 10 % of dɛ = 0.1 ( εs - Ɛo ) 0.10 ( 4.1 - 2.1 ) or ~ 0.2 , whereas the reported decrease in ɛs is approximately 0.8 [ 1,2 ] . This zeroth order calculation actually over estimates the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch