Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 40
In addition , susceptibility to moisture adsorption is observed at normalized SiH
bond density less than 50 % as shown in figure 5 . Best performance in terms of
low dielectric constant , low stress , and stability to moisture adsorption is
observed ...
In addition , susceptibility to moisture adsorption is observed at normalized SiH
bond density less than 50 % as shown in figure 5 . Best performance in terms of
low dielectric constant , low stress , and stability to moisture adsorption is
observed ...
Page 42
100 • oa eng : Film Stress , MPa Film Density , g / cc Dielectric Constant Film
Density , g / cc : $ 1 . 20 100 20 40 60 80 Norm . SIH Bond Density , % 100 20 40
60 80 Norm . SiH Bond Density , % ( b ) ( a ) Film Shrinkage , % Film Density , g /
cc ...
100 • oa eng : Film Stress , MPa Film Density , g / cc Dielectric Constant Film
Density , g / cc : $ 1 . 20 100 20 40 60 80 Norm . SIH Bond Density , % 100 20 40
60 80 Norm . SiH Bond Density , % ( b ) ( a ) Film Shrinkage , % Film Density , g /
cc ...
Page 43
8 Bulk Film Density , g / cc Figure 6 . Two phase parallel capacitance model of
hydrogen silsesquioxane . Dielectric constant data deviating from model is
attributed to cure processing under oxidative conditions producing polar silanol
and ...
8 Bulk Film Density , g / cc Figure 6 . Two phase parallel capacitance model of
hydrogen silsesquioxane . Dielectric constant data deviating from model is
attributed to cure processing under oxidative conditions producing polar silanol
and ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer