Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 99
TEMPERATURE AND MOISTURE DEPENDENCE OF DIELECTRIC CONSTANT
FOR BULK SILICA AEROGELS * L . W . HRUBESH and S . R . Buckley ,
Chemistry & Materials Science Department , Lawrence Livermore National
Laboratory ...
TEMPERATURE AND MOISTURE DEPENDENCE OF DIELECTRIC CONSTANT
FOR BULK SILICA AEROGELS * L . W . HRUBESH and S . R . Buckley ,
Chemistry & Materials Science Department , Lawrence Livermore National
Laboratory ...
Page 102
Of these , only the orientational polarization ( ie . , the contribution of the
permanent dipoles in the material ) is directly temperature dependent . For gas -
like behavior , this dependence can be seen from the molar polarization or
Clausius ...
Of these , only the orientational polarization ( ie . , the contribution of the
permanent dipoles in the material ) is directly temperature dependent . For gas -
like behavior , this dependence can be seen from the molar polarization or
Clausius ...
Page 103
3 . Plot of dielectric constant versus moisture content for silica aerogel . The
temperature dependence data for the dielectric constant of silica aerogels is
plotted in Fig . 4 . We obtain a linear least squares fit to the data from which we
measure a ...
3 . Plot of dielectric constant versus moisture content for silica aerogel . The
temperature dependence data for the dielectric constant of silica aerogels is
plotted in Fig . 4 . We obtain a linear least squares fit to the data from which we
measure a ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer