Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 115
... deposited at 400 ° C . Prior to capping , the FPI film is first degassed for 60 sec to remove moisture and other volatiles before deposition is intitiated . A tri - layer metal stack is then deposited , patterned and etched followed by ...
... deposited at 400 ° C . Prior to capping , the FPI film is first degassed for 60 sec to remove moisture and other volatiles before deposition is intitiated . A tri - layer metal stack is then deposited , patterned and etched followed by ...
Page 213
... deposited at a low vaporizer temperature exhibit a smooth surface ( RMS ~ 4 nm ) while those deposited at high vaporizer temperature have a rougher surface ( RMS ~ 16 nm ) . However , other properties of the films remained very similar ...
... deposited at a low vaporizer temperature exhibit a smooth surface ( RMS ~ 4 nm ) while those deposited at high vaporizer temperature have a rougher surface ( RMS ~ 16 nm ) . However , other properties of the films remained very similar ...
Page 262
... deposited in a single wafer PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are ...
... deposited in a single wafer PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch