Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 73
Page 161
It is shown that the higher the quality of the as - deposited film ( or post - deposition treated film ) , the higher the quality of the polished film . The polishing time has little effect on the surface characteristics of high quality ...
It is shown that the higher the quality of the as - deposited film ( or post - deposition treated film ) , the higher the quality of the polished film . The polishing time has little effect on the surface characteristics of high quality ...
Page 213
In this study parylene AF - 4 films were vapor - deposited on silicon wafers by pyrolytic decomposition of the cyclic dimer , cyclodi ( a , a , a ' , a ' - tetrafluoro - p - xylylene ) using four different deposition conditions .
In this study parylene AF - 4 films were vapor - deposited on silicon wafers by pyrolytic decomposition of the cyclic dimer , cyclodi ( a , a , a ' , a ' - tetrafluoro - p - xylylene ) using four different deposition conditions .
Page 262
The FSG films used in this study were deposited in a single wafer PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties ...
The FSG films used in this study were deposited in a single wafer PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer