Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 115
The process flow includes first depositing a BPSG pad layer followed by a
blanket 1 um thick layer of the FPI which is capped with a 3000Å PE - TEOS SiO2
capping layer deposited at 400°C . Prior to capping , the FPI film is first degassed
for ...
The process flow includes first depositing a BPSG pad layer followed by a
blanket 1 um thick layer of the FPI which is capped with a 3000Å PE - TEOS SiO2
capping layer deposited at 400°C . Prior to capping , the FPI film is first degassed
for ...
Page 213
In this study parylene AF - 4 films were vapor - deposited on silicon wafers by
pyrolytic decomposition of the cyclic dimer , cyclodi ( a , a , a ' , a ' - tetrafluoro - p -
xylylene ) using four different deposition conditions . Two different wafer ...
In this study parylene AF - 4 films were vapor - deposited on silicon wafers by
pyrolytic decomposition of the cyclic dimer , cyclodi ( a , a , a ' , a ' - tetrafluoro - p -
xylylene ) using four different deposition conditions . Two different wafer ...
Page 262
The FSG films used in this study were deposited in a single wafer PECVD system
. Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed
at SiF / SiO - 2 . 5 % unless specified in the text . The basic film properties of the ...
The FSG films used in this study were deposited in a single wafer PECVD system
. Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed
at SiF / SiO - 2 . 5 % unless specified in the text . The basic film properties of the ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer