Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 21
... deposition and planarization by CMP . using on to a new kness iched lines . a ) 593 5.0K X35.6k860 b ) 33 5.0K X25.8k 1 : 20ùm O nm . le of Figure 1 . Cross - sectional SEM views of a - C : F ILD using a high - biased deposition process ...
... deposition and planarization by CMP . using on to a new kness iched lines . a ) 593 5.0K X35.6k860 b ) 33 5.0K X25.8k 1 : 20ùm O nm . le of Figure 1 . Cross - sectional SEM views of a - C : F ILD using a high - biased deposition process ...
Page 213
... deposition conditions . Two different wafer temperatures and two different vaporizer temperatures were used , while the chamber pressure was kept constant . High vaporizer temperature and low wafer temperature give the highest deposition ...
... deposition conditions . Two different wafer temperatures and two different vaporizer temperatures were used , while the chamber pressure was kept constant . High vaporizer temperature and low wafer temperature give the highest deposition ...
Page 223
... DEPOSITION RATE , A / mi 5000 130 140 150 160 170 180 SOURCE TEMPERATURE , C Figure 4. Deposition rate vs. Parylene - N source temperature . 50 mT process pressure , -20 ° C chuck temperature , 60 seconds deposition time . = If the rate ...
... DEPOSITION RATE , A / mi 5000 130 140 150 160 170 180 SOURCE TEMPERATURE , C Figure 4. Deposition rate vs. Parylene - N source temperature . 50 mT process pressure , -20 ° C chuck temperature , 60 seconds deposition time . = If the rate ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch