Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 25
Page 69
... desorption from SiOF films deposited by biased ECR - CVD was studied . It was found that desorbed F atoms from the SiOF film react with Ti silicide film resulting in forming SiF4 gas . The evolution of SiF4 gas caused the peel - off of ...
... desorption from SiOF films deposited by biased ECR - CVD was studied . It was found that desorbed F atoms from the SiOF film react with Ti silicide film resulting in forming SiF4 gas . The evolution of SiF4 gas caused the peel - off of ...
Page 109
... desorption - analysis of an uncured xerogel ( Recipe A ) revealed that significant moisture desorption occurs at approximately 130 C and continues to desorb as the temperature is increased , as seen in Figure 6a . This confirms that ...
... desorption - analysis of an uncured xerogel ( Recipe A ) revealed that significant moisture desorption occurs at approximately 130 C and continues to desorb as the temperature is increased , as seen in Figure 6a . This confirms that ...
Page 221
... desorption begins at about 400 ° C , with a peak at 460 ° C . Intensity , Arb C8H8 H20 250 300 350 400 450 500 Temperature , C Figure 2. Thermal desorption analysis of a parylene - N thin film on a silicon wafer . The ramp rate was ...
... desorption begins at about 400 ° C , with a peak at 460 ° C . Intensity , Arb C8H8 H20 250 300 350 400 450 500 Temperature , C Figure 2. Thermal desorption analysis of a parylene - N thin film on a silicon wafer . The ramp rate was ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch