Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 39
Dielectric constant was determined through films at a frequency of 1 MHz using metal - insulator - semiconductor ( MIS ) ... per film thickness to a hot plate baked film was quantified to determine normalized SiH bond density .
Dielectric constant was determined through films at a frequency of 1 MHz using metal - insulator - semiconductor ( MIS ) ... per film thickness to a hot plate baked film was quantified to determine normalized SiH bond density .
Page 141
These defects cause the film to break prematurely and prevent a determination of E. Stress - strain data for very thin ... The Young's modulus is determined in the linear elastic region of the stress - strain curve , but the FPI film ...
These defects cause the film to break prematurely and prevent a determination of E. Stress - strain data for very thin ... The Young's modulus is determined in the linear elastic region of the stress - strain curve , but the FPI film ...
Page 257
refractive indices were determined at an accuracy of +0.01 . RESULTS AND DISCUSSIONS Heat Resistance The polyimide film must be able to withstand high temperature operations although the back - end processing temperature is trending ...
refractive indices were determined at an accuracy of +0.01 . RESULTS AND DISCUSSIONS Heat Resistance The polyimide film must be able to withstand high temperature operations although the back - end processing temperature is trending ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer