Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ABSTRACT The influence of ...
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ABSTRACT The influence of ...
Page 87
RECENT ADVANCES IN LOW K POLYMERIC MATERIALS K. R. CARTER IBM Research Division , Almaden Research Center , 650 Harry Road , San Jose , CA 95120-6099 ABSTRACT > As microelectronic device dimensions decrease and functionality density ...
RECENT ADVANCES IN LOW K POLYMERIC MATERIALS K. R. CARTER IBM Research Division , Almaden Research Center , 650 Harry Road , San Jose , CA 95120-6099 ABSTRACT > As microelectronic device dimensions decrease and functionality density ...
Page 261
The devices were tested using an intensive thermal stability test methodology . ... Although the device performance did not change greatly , the reaction certainly affects the long term device reliability ( vide infra ) .
The devices were tested using an intensive thermal stability test methodology . ... Although the device performance did not change greatly , the reaction certainly affects the long term device reliability ( vide infra ) .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer