Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM
Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development
Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ...
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM
Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development
Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ...
Page 87
5 and turn of the century CMOS devices may require materials with dielectric
constants approaching 2 . 0 . While there are a number of possible ... As
microelectronic device dimensions decrease and functionality density increases ,
there ...
5 and turn of the century CMOS devices may require materials with dielectric
constants approaching 2 . 0 . While there are a number of possible ... As
microelectronic device dimensions decrease and functionality density increases ,
there ...
Page 261
The devices were tested using an intensive thermal stability test methodology . A
TiSi2 reaction with F ... Although the device performance did not change greatly ,
the reaction certainly affects the long term device reliability ( vide infra ) . Barrier ...
The devices were tested using an intensive thermal stability test methodology . A
TiSi2 reaction with F ... Although the device performance did not change greatly ,
the reaction certainly affects the long term device reliability ( vide infra ) . Barrier ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer