Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 105
... dielectric material is attractive for its predicted low dielectric constant ( models suggest values less than 2.012 ) . Also , porous silica uses similar precursors ( e.g. tetraethoxysilane , TEOS ) as those used for spin - on glass and ...
... dielectric material is attractive for its predicted low dielectric constant ( models suggest values less than 2.012 ) . Also , porous silica uses similar precursors ( e.g. tetraethoxysilane , TEOS ) as those used for spin - on glass and ...
Page 147
... DIELECTRIC STRENGTH Shalabh Tandon and Richard J. Farris Silvio O Conte Building Polymer Science and Engineering ... material in the capacitor industry in the last decade , replacing polychlorinated solvent swelled Kraft paper as the ...
... DIELECTRIC STRENGTH Shalabh Tandon and Richard J. Farris Silvio O Conte Building Polymer Science and Engineering ... material in the capacitor industry in the last decade , replacing polychlorinated solvent swelled Kraft paper as the ...
Page 155
... dielectric material removal rate , which is significantly affected by process factors such as polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric ...
... dielectric material removal rate , which is significantly affected by process factors such as polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch