Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 265
5 Optical microTiSiz delamination problems resulted from fluorine diffusion from
the scope top view picture FSG films at ... FSG film or put in effective diffusion
metal pad . barriers to prevent F from diffusing to the metals or to the transistors .
5 Optical microTiSiz delamination problems resulted from fluorine diffusion from
the scope top view picture FSG films at ... FSG film or put in effective diffusion
metal pad . barriers to prevent F from diffusing to the metals or to the transistors .
Page 266
One needs to do an optimization to decide which film is more suitable for
inhibiting F diffusion . 4 . Conclusions Thermal stability was studied for multi -
level interconnects with PECVD FSG as the IMD layer . Chemical reactions of
fluorine with ...
One needs to do an optimization to decide which film is more suitable for
inhibiting F diffusion . 4 . Conclusions Thermal stability was studied for multi -
level interconnects with PECVD FSG as the IMD layer . Chemical reactions of
fluorine with ...
Page 272
The above findings suggest that TiN acts as a more effective diffusion barrier than
Ti against fluorine penetration . The diffusion of Ti from TiN into SiOF may have
effectively reduced the activity and mobility of fluorine . Conversely the Ti in ...
The above findings suggest that TiN acts as a more effective diffusion barrier than
Ti against fluorine penetration . The diffusion of Ti from TiN into SiOF may have
effectively reduced the activity and mobility of fluorine . Conversely the Ti in ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer