Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 265
In order to solve the problem , one can either make a more stable FSG film or put in effective diffusion barriers to prevent F from diffusing to the metals or to the transistors . - Fig . 5 Optical microscope top view picture showing ...
In order to solve the problem , one can either make a more stable FSG film or put in effective diffusion barriers to prevent F from diffusing to the metals or to the transistors . - Fig . 5 Optical microscope top view picture showing ...
Page 266
One needs to do an optimization to decide which film is more suitable for inhibiting F diffusion . 4. Conclusions Thermal stability was studied for multi - level interconnects with PECVD FSG as the IMD layer .
One needs to do an optimization to decide which film is more suitable for inhibiting F diffusion . 4. Conclusions Thermal stability was studied for multi - level interconnects with PECVD FSG as the IMD layer .
Page 272
The above findings suggest that TiN acts as a more effective diffusion barrier than Ti against fluorine penetration . The diffusion of Ti from TiN into SiOF may have effectively reduced the activity and mobility of fluorine .
The above findings suggest that TiN acts as a more effective diffusion barrier than Ti against fluorine penetration . The diffusion of Ti from TiN into SiOF may have effectively reduced the activity and mobility of fluorine .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |