Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 12
Page 63
... discussed here were recorded with the analyzer aligned along the sample normal . Procedures for analysis of XPS data have been discussed previously . Spectra were referenced to sample charging by assigning a binding energy of 689.1 eV ...
... discussed here were recorded with the analyzer aligned along the sample normal . Procedures for analysis of XPS data have been discussed previously . Spectra were referenced to sample charging by assigning a binding energy of 689.1 eV ...
Page 265
... discussed previously , F atoms may diffuse through the inter - layer dielectric ( ILD ) stack and react with TiSi2 , causing TiSi2 film delamination . According to the electrical test data , the TiSi2 delamination did not significantly ...
... discussed previously , F atoms may diffuse through the inter - layer dielectric ( ILD ) stack and react with TiSi2 , causing TiSi2 film delamination . According to the electrical test data , the TiSi2 delamination did not significantly ...
Page 278
... discussed above , about 10 % of the Si - O - Si groups are removed , and the maximum decrease in εs from removal of these groups is about 10 % of dɛ = 0.1 ( εs - Ɛo ) 0.10 ( 4.1 - 2.1 ) or ~ 0.2 , whereas the reported decrease in ɛs is ...
... discussed above , about 10 % of the Si - O - Si groups are removed , and the maximum decrease in εs from removal of these groups is about 10 % of dɛ = 0.1 ( εs - Ɛo ) 0.10 ( 4.1 - 2.1 ) or ~ 0.2 , whereas the reported decrease in ɛs is ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch