Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 33
Figure 3 shows the effect indicate no significant change in the dielectric on dielectric constant . The dielectric constant constant . in the unheated condition is around 3.1 . Upon RESULTS heating of the film , the dielectric constant ...
Figure 3 shows the effect indicate no significant change in the dielectric on dielectric constant . The dielectric constant constant . in the unheated condition is around 3.1 . Upon RESULTS heating of the film , the dielectric constant ...
Page 99
Some of the previous work discusses the effect of sorbed molecules on the dielectric properties of silica aerogels , and one paper [ 3 ] reports the effect of sorbed water on the dielectric constant for low frequencies ( < 107Hz ) .
Some of the previous work discusses the effect of sorbed molecules on the dielectric properties of silica aerogels , and one paper [ 3 ] reports the effect of sorbed water on the dielectric constant for low frequencies ( < 107Hz ) .
Page 283
There may also be an effect due to enhanced TEOS surface mobility when CF is added to the process . ACKNOWLEDGEMENTS The authors would like to acknowledge the assistance of Joanie Alexander on SEM micrographs .
There may also be an effect due to enhanced TEOS surface mobility when CF is added to the process . ACKNOWLEDGEMENTS The authors would like to acknowledge the assistance of Joanie Alexander on SEM micrographs .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |