Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 81
... element ( 1 wt % Ti ) were metallized on polyimide . Plasma pre - treatment of the polyimide surface and post - metallization annealing were used to modify the interface . Interfaces and metal film layers were investigated ; a drastic ...
... element ( 1 wt % Ti ) were metallized on polyimide . Plasma pre - treatment of the polyimide surface and post - metallization annealing were used to modify the interface . Interfaces and metal film layers were investigated ; a drastic ...
Page 85
... element ( Ti ) , precipitation ( e.g. CuTi2 ) , and interfacial layer formation can influence the resistivity decrease ( Fig . 7 ) . We note here that both the resistivity and its decrease after the annealing process are affected by the ...
... element ( Ti ) , precipitation ( e.g. CuTi2 ) , and interfacial layer formation can influence the resistivity decrease ( Fig . 7 ) . We note here that both the resistivity and its decrease after the annealing process are affected by the ...
Page 199
... elements of the copolymerization reactor . Accurate and stable temperature control at both sublimators , the cracking furnace , the mixing chamber and the chuck are necessary for successful chemical vapor copolymerization . The solid ...
... elements of the copolymerization reactor . Accurate and stable temperature control at both sublimators , the cracking furnace , the mixing chamber and the chuck are necessary for successful chemical vapor copolymerization . The solid ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch