Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 32
... ellipsometry at 632 nm using a Rudolph FE - IIID variable angle ellipsometer . Infrared measurements were converted into absorbance using the thin film approximation and the Si signal was subtracted by using a reference wafer associated ...
... ellipsometry at 632 nm using a Rudolph FE - IIID variable angle ellipsometer . Infrared measurements were converted into absorbance using the thin film approximation and the Si signal was subtracted by using a reference wafer associated ...
Page 52
... ellipsometry . The optical measurement for dielectric constant was performed by ellipsometry at λ = 632.8 nm , and calculated based on the measured in - plane refractive index . For the fabrication of patterned Chemat - B films ...
... ellipsometry . The optical measurement for dielectric constant was performed by ellipsometry at λ = 632.8 nm , and calculated based on the measured in - plane refractive index . For the fabrication of patterned Chemat - B films ...
Page 201
... ellipsometry from 300 nm to 850 nm and calculated at each point by a non - linear least squares fit of thickness and the complex refractive index in the Cauchy form . No appreciable extinction coefficient was needed and the refractive ...
... ellipsometry from 300 nm to 850 nm and calculated at each point by a non - linear least squares fit of thickness and the complex refractive index in the Cauchy form . No appreciable extinction coefficient was needed and the refractive ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch