Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 64
The Cu ( 2p32 ) peak also shifts slightly ( by less than 1 eV ) to lower binding energy . These changes are consistent with the formation of Cu ( O ) , as is the change in the modified Auger parameter of 1850.5 ev .
The Cu ( 2p32 ) peak also shifts slightly ( by less than 1 eV ) to lower binding energy . These changes are consistent with the formation of Cu ( O ) , as is the change in the modified Auger parameter of 1850.5 ev .
Page 84
Examination of the Cu 2p line reveals its position N ls shifts slightly to a higher binding energy ( 933 eV ) as compared to Cu in CuTi film ( 932.5 eV which is almost similar to pure metallic copper [ 10 ] ) . This suggests that copper ...
Examination of the Cu 2p line reveals its position N ls shifts slightly to a higher binding energy ( 933 eV ) as compared to Cu in CuTi film ( 932.5 eV which is almost similar to pure metallic copper [ 10 ] ) . This suggests that copper ...
Page 285
Although this is not an exact measurement of the adhesion energy , this process has previously been shown to be successful in predicting the adhesion properties of materials ! ? . Specifically , we examined how the adhesion strength ...
Although this is not an exact measurement of the adhesion energy , this process has previously been shown to be successful in predicting the adhesion properties of materials ! ? . Specifically , we examined how the adhesion strength ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |