Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 109
A typical plot of this experiment is seen in Figure 5 . Electric Field ( MV / cm ) 1.6 2.6 3,1 3.6 1.00E - 03 2.1 1.00E - 05 Current ... 20.00 40.00 60.00 00 It may be inferred from the above set of experiments. 80.00 120.0 Figure 6.
A typical plot of this experiment is seen in Figure 5 . Electric Field ( MV / cm ) 1.6 2.6 3,1 3.6 1.00E - 03 2.1 1.00E - 05 Current ... 20.00 40.00 60.00 00 It may be inferred from the above set of experiments. 80.00 120.0 Figure 6.
Page 122
EXPERIMENTAL a A general synthesis of poly ( arylene ethers ) has been described elsewhere [ 8 ] . ... All electron beam exposure experiments were conducted at a temperature of 200 ° C and in an argon atmosphere ( 10 - 20 milliTorr ) .
EXPERIMENTAL a A general synthesis of poly ( arylene ethers ) has been described elsewhere [ 8 ] . ... All electron beam exposure experiments were conducted at a temperature of 200 ° C and in an argon atmosphere ( 10 - 20 milliTorr ) .
Page 262
During the experiment , the radius of the wafer curvature was measured at different temperatures . The temperature ramp rate was 1.8 ° C ... Two types of experiments were designed ( see table 2 ) . In Experiment 1 , the splits were ...
During the experiment , the radius of the wafer curvature was measured at different temperatures . The temperature ramp rate was 1.8 ° C ... Two types of experiments were designed ( see table 2 ) . In Experiment 1 , the splits were ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |