Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 57
Page 109
A typical plot of this experiment is seen in Figure 5 . Electric Field ( MV / cm ) 1 , 6
2 , 1 2 , 6 3 , 1 1 . 00E - 03 + 3 . 6 1 . 00E - 05 Current ( A ) 1 . 00E - 07 1 . 00E - 09
Figure 5 . The voltage breakdown test for a cured film , 1 . 25 um in thickness .
A typical plot of this experiment is seen in Figure 5 . Electric Field ( MV / cm ) 1 , 6
2 , 1 2 , 6 3 , 1 1 . 00E - 03 + 3 . 6 1 . 00E - 05 Current ( A ) 1 . 00E - 07 1 . 00E - 09
Figure 5 . The voltage breakdown test for a cured film , 1 . 25 um in thickness .
Page 122
EXPERIMENTAL A general synthesis of poly ( arylene ethers ) has been
described elsewhere [ 8 ] . ... All electron beam exposure experiments were
conducted at a temperature of 200°C and in an argon atmosphere ( 10 - 20
milliTorr ) .
EXPERIMENTAL A general synthesis of poly ( arylene ethers ) has been
described elsewhere [ 8 ] . ... All electron beam exposure experiments were
conducted at a temperature of 200°C and in an argon atmosphere ( 10 - 20
milliTorr ) .
Page 262
5 % unless specified in the text . The basic film properties of the PECVD
deposited FSG are published elsewhere . ( 6 , 7 ) 2 . 1 Chemical Reaction with Ti
, TiN , Al , or TiSiz : The four types of samples used in this experiment are listed in
table 1 ...
5 % unless specified in the text . The basic film properties of the PECVD
deposited FSG are published elsewhere . ( 6 , 7 ) 2 . 1 Chemical Reaction with Ti
, TiN , Al , or TiSiz : The four types of samples used in this experiment are listed in
table 1 ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |