Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 122
... film compared to conventional thermal processing . Such capabilities can be ... thickness after the spinning and baking processes is in the range of 8000 ... film thickness was assumed to be irradiated by the electron beam . All electron ...
... film compared to conventional thermal processing . Such capabilities can be ... thickness after the spinning and baking processes is in the range of 8000 ... film thickness was assumed to be irradiated by the electron beam . All electron ...
Page 138
... film thickness , respectively . The moduli of Si and GaAs are 131 and 85.5 GPa , respectively . The slope of the stress - temperature curve is expressed by k = do dt = ( α , -a , ) M , where the a's are the thermal expansion ...
... film thickness , respectively . The moduli of Si and GaAs are 131 and 85.5 GPa , respectively . The slope of the stress - temperature curve is expressed by k = do dt = ( α , -a , ) M , where the a's are the thermal expansion ...
Page 201
accurate measurement of both thin film thickness and metal dot area is critical in the measurement of dielectric permittivity . The area of each dot was measured with a microscope at a resolution of 0.1 mm with a dot size of about 8.5 ...
accurate measurement of both thin film thickness and metal dot area is critical in the measurement of dielectric permittivity . The area of each dot was measured with a microscope at a resolution of 0.1 mm with a dot size of about 8.5 ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch