Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 49
1.5 OT11 / TEOS 1.25 OT11 / A - SION 1 OT11 / B - SION 418 / TEOS 0.75 1418 / A - SION 418 / B - SION 0.5 0.2 1.2 0.4 0.6 0.8 GAS FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGs ( T11,418 ) relative to various liner ...
1.5 OT11 / TEOS 1.25 OT11 / A - SION 1 OT11 / B - SION 418 / TEOS 0.75 1418 / A - SION 418 / B - SION 0.5 0.2 1.2 0.4 0.6 0.8 GAS FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGs ( T11,418 ) relative to various liner ...
Page 280
Films were deposited using both high and low flow processes with various CF / TEOS ratios . Figure 1 shows that the compressive stress decreases as the refractive index decreases . It also shows that the stress decreases when the TEOS ...
Films were deposited using both high and low flow processes with various CF / TEOS ratios . Figure 1 shows that the compressive stress decreases as the refractive index decreases . It also shows that the stress decreases when the TEOS ...
Page 283
This is possibly due to an increased plasma etch rate of the top surface as additional C2F6 is added to the gas flow . For 0.5 micron gaps , however , the sidewall deposition rate shows a modest increase . In the case of the one micron ...
This is possibly due to an increased plasma etch rate of the top surface as additional C2F6 is added to the gas flow . For 0.5 micron gaps , however , the sidewall deposition rate shows a modest increase . In the case of the one micron ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer