Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 26
Page 49
8 GAS FLOW RATIO CF4 : CHF3 0 . 8 1 . 2 1 . 2 Figure 7 . Etch selectivities of
various SOGs ( T11 , 418 ) relative to various liner films ( TEOS , A - SION , and B
- SION ) vs . gas flow ratio CF4 / CHF3 . _ Fo T11TEOS - - 0 - - T11 / A - SION T11
...
8 GAS FLOW RATIO CF4 : CHF3 0 . 8 1 . 2 1 . 2 Figure 7 . Etch selectivities of
various SOGs ( T11 , 418 ) relative to various liner films ( TEOS , A - SION , and B
- SION ) vs . gas flow ratio CF4 / CHF3 . _ Fo T11TEOS - - 0 - - T11 / A - SION T11
...
Page 280
Films were deposited using both high and low flow processes with various CzF /
TEOS ratios . Figure 1 shows that the compressive stress decreases as the
refractive index decreases . It also shows that the stress decreases when the
TEOS ...
Films were deposited using both high and low flow processes with various CzF /
TEOS ratios . Figure 1 shows that the compressive stress decreases as the
refractive index decreases . It also shows that the stress decreases when the
TEOS ...
Page 283
This is possibly due to an increased plasma etch rate of the top surface as
additional CF , is added to the gas flow . For 0 . 5 micron gaps , however , the
sidewall deposition rate shows a modest increase . In the case of the one micron
gap the ...
This is possibly due to an increased plasma etch rate of the top surface as
additional CF , is added to the gas flow . For 0 . 5 micron gaps , however , the
sidewall deposition rate shows a modest increase . In the case of the one micron
gap the ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer